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MMBT2907


Part Number MMBT2907
Manufacturer ART CHIP
Title PNP GENERAL PURPOSE AMPLIFIER
Description PNP GENERAL PURPOSE AMPLIFIER „ FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) „ ORDERING INFORMATION...
Features z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) „ ORDERING INFORMATION Device Package Shipping† MMBT2907 SOT −23 3000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape ...

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MMBT2907 : Production specification PNP General Purpose Amplifier FEATURES z Epitaxial planar die construction. z Ideal for medium power amplification and switching. Pb Lead-free MMBT2907 APPLICATIONS z This device is designed as a general purpose amplifier and switching. ORDERING INFORMATION Type No. Marking MMBT2907 M2B SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PD RθJA Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Thermal resistance,Junction to ambient -60 -40 -5 -600 350 357 Tj,Tstg Junction and Storage Temperature -55 to +15.

MMBT2907 : PNP EPITAXIAL SILICON TRANSISTOR MMBT2907/ALT1 GENERAL PURPOSE TRANSISTOR ▪ Complement to MMBT2222/ALT1 ▪ Collector Dissipation: Pc(max)=225mW Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃ Characteristic Symbol Rating 2907 2907A Collector-Base Voltage Vcbo -60 Collector-Emitter Voltage Vceo -40 -60 Emitter-Base Voltage Vebo -5 Collector Current Ic -600 Collector Dissipation Ta=25℃* PD 225 Junction Temperature Tj 150 Storage Temperature Tstg -55-150 Unit V V V mA mW ℃ ℃ PIN: STYLE NO 1 123 BEC ELECTRICAL CHARACTERISTICS at Ta=25℃ Characteristic Symbol Min Max Unit Test Conditions Collector-Base Breakdown Voltage BVcbo -60 V Ic=-10uA Ie=0 Collector-Emitter.

MMBT2907 : REPLACEMENT TYPE : MMBT2907 FEATURES  Epitaxial Planar Die Construction  Complementary NPN Type Available(HABT2222) HABT2907(PNP) SWITCHING TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current-Continuous IC -600 mA Total Device Dissipation PC Thermal Resistance Junction to Ambient RθJA 250 mW 500 °C /W Junction Temperature TJ 150 °C Storage Temperature Tstg -55 to +150 °C SOT-23 MARKING:M2B 1: BASE 2:EMITTER 3: COLLECTOR ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted) Parameter Symbol Test cond.

MMBT2907 : .

MMBT2907 : This device is designed for use with general-purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from process 63. PN2907 EBC TO-92 MMBT2907 C SOT-23 Mark:2B E B Ordering Information Part Number PN2907BU MMBT2907_D87Z Top Mark PN2907 2B Package TO-92 3L SOT-23 3L Packing Method Bulk Tape and Reel © 1997 Fairchild Semiconductor Corporation PN2907 / MMBT2907 Rev. 1.1.0 1 www.fairchildsemi.com PN2907 / MMBT2907 — PNP General-Purpose Transistor Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts.

MMBT2907 : MMBT2907 / MMBT2907A MMBT2907 / MMBT2907A PNP Surface Mount Si-Epi-Planar Switching Transistors Si-Epi-Planar Schalttransistoren für die Oberflächenmontage Version 2015-05-12 0.4+0.1 -0.05 2.9 ±0.1 3 Type Code 2.4 ±0.2 1.3±0.1 1.1+0.1 -0.2 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. 12 1.9±0.1 Dimensions - Maße [mm] 1=B 2=E 3=C Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle PNP 250 mW SOT-23 (TO-236) 0.01 g Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollek.

MMBT2907 : General Purpose Transistor (PNP) COMCHIP www.comchip tech .com MMBT2907A Features Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT2222A) Ideal for Medium Power Amplification and Switching TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 .056 (1.43) .052 (1.33) 1 2 max. .004 (0.1) Pin Configuration 1 = Base 2 = Emitter 3 = Collector Mechanical Data Case: SOT-23 Plastic Package Weight: approx. 0.008g Top View COLLECTOR 3 1 BASE .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) 2 EMITTER .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Maximum Ratings & Thermal Characteristics Rating Collector – Emitter Voltage Collect.

MMBT2907 : MMBT2907 / MMBT2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor MMBT2222 and MMBT2222A are recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC Ptot Tj TS Value MMBT2907 MMBT2907A 60 40 60 5 600 200 150 -55 to +150 Unit V V V mA mW OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, .

MMBT2907 : PNP General Purpose Transistors MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC MMBT2907 MMBT2907A COLLECTOR 3 3 1 BASE 2 EMITTER 1 2 SOT-23 2907 -40 2907A -60 -60 -5.0 -600 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature DEVICE MARKING MMBT2907=M2B; MMBT2907A=2F ELECTRICAL CHARACTERISTICS Characteristics Symbol PD R q.

MMBT2907 : SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package.  / Features 600mA。 Collector currents to 600mA.  / Applications 。 General purpose amplifier.  / Equivalent Circuit / Pinning 3 2 1 PIN 1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Range Marking 100~300 H2B http://www.fsbrec.com 1/6 MMBT2907 Rev.E Nov.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC Tj Tstg DATA SHEET Rating -60 -40 -5.0 -600 350 150 -55~150 Unit V V .

MMBT2907 : MMBT2907 / MMBT2907A 600mA General Purpose PNP Epitaxial Planar Transistor ■ Features • High collector-emitterbreakdien voltage. (BVCEO = -60V@IC=-10mA). • Small load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current. • Suffix "G" indicates Halogen-free part, ex.MMBT2907G. • Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 ■ Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 • Mounting Position : Any • Weight : Approximated 0.008 gram ■ Outline SOT-.

MMBT2907-G : www.DataSheet4U.com General Purpose Transistor SMD Diodes Specialist MMBT2907-G (PNP) RoHS Device Features -Epitaxial planar die construction -Device is designed as a general purpose amplifier and switching. 0.056 (1.40) 0.047 (1.20) SOT-23 0.119 (3.00) 0.110 (2.80) 3 1 0.083 (2.10) 0.066 (1.70) 0.044 (1.10) 0.035 (0.90) 2 0.006 (0.15) 0.002 (0.05) 0.103 (2.60) 0.086 (2.20) Collector 3 1 Base 0.006 (0.15) max 0.020 (0.50) 0.013 (0.35) 2 Emitter 0.007 (0.20) min Dimensions in inches and (millimeter) Maximum Ratings(at T A =25 C unless otherwise noted) Parameter Collector-Base voltage Powe r di ssipa tioi n Collector current-Continuous St or ag e tempe rat ur e an d jun ction tempe.

MMBT2907A : Production specification PNP General Purpose Amplifier FEATURES  Epitaxial planar die construction.  Complementary NPN type available Pb Lead-free MMBT2222A.  Ideal for medium power amplification and switching.  MSL 1 APPLICATIONS  This device is designed as a general purpose amplifier and switching.  The useful dynamic range extends to 600mA as a switch and to 100MHz as a amplifier. ORDERING INFORMATION Type No. Marking MMBT2907A 2F MMBT2907A SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PD RθjA Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -.

MMBT2907A : • The MMBT2907A is designed for using in driver stage of AF amplifier and general purpose amplification. • Large IC , IC(Max)= -0.6A • Low VCE(sat), ideal for low-voltage operation. • Complementary to MMBT2222A. • Pb-free package Symbol MMBT2907A Outline SOT-23 B:Base C:Collector E:Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range MMBT2907A Symbol VCBO VCEO VEBO IC Pd RθJA Tj Tstg Limits -60 -60 -5 -0.6 225 556 -55~+150 -55~+150 Unit V V V A mW °C/W °C °C CYStek Product Speci.

MMBT2907A : REPLACEMENT TYPE : MMBT2907A FEATURES  Epitaxial Planar Die Construction  Complementary NPN Type Available(HABT2222A) HABT2907A(PNP) SWITCHING TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO -60 Collector-Emitter Voltage VCEO -60 Emitter-Base Voltage VEBO -5 Collector Current-Continuous IC -600 Total Device Dissipation PC 250 Thermal Resistance Junction to Ambient RθJA 500 Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 Unit V V V mA mW °C /W °C °C SOT-23 MARKING:2F 1: BASE 2:EMITTER 3: COLLECTOR ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted) Parameter Symbol Test cond.

MMBT2907A : ® MMBT2907A SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type MMBT2907A s Marking M29 s s s SILICON EPITAXIAL PLANAR PNP TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE NPN COMPLEMENTARY TYPE IS MMBT2222A SOT-23 APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT s SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION VOLTAGE s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj Parameter Collector-Emitter Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p 5 ms) Total Dissipation at T amb = 25 o C S.




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