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IXBN75N170

IXYS
Part Number IXBN75N170
Manufacturer IXYS
Description Monolithic Bipolar MOS Transistor
Published Jun 26, 2017
Detailed Description Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBN75N170 VCES IC90 VCE(sat) = = ≤ ...
Datasheet PDF File IXBN75N170 PDF File

IXBN75N170
IXBN75N170

Overview
Preliminary Technical Information BiMOSFETTM Monolithic Bipolar MOS Transistor IXBN75N170 VCES IC90 VCE(sat) = = ≤ 1700V 75A 3.
1V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous 1700 1700 ±20 V V V Transient ±30 V TC = 25°C TC = 90°C TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C 145 75 680 ICM = 150 VCE < 0.
8 • VCES 625 -55 .
.
.
+150 A A A A W °C 150 °C -55 .
.
.
+150 °C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062 in.
) from Case for 10 300 °C 260 °C 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Mounting ...


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