DatasheetsPDF.com

IXBN42N170A

IXYS
Part Number IXBN42N170A
Manufacturer IXYS
Description Monolithic Bipolar MOS Transistor
Published Jun 26, 2017
Detailed Description Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBN42N170A VC...
Datasheet PDF File IXBN42N170A PDF File

IXBN42N170A
IXBN42N170A

Overview
Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBN42N170A VCES = IC90 = VCE(sat) tfi ≤ = 1700V 21A 6.
0V 20ns E Symbol VCES VCGR VGES VGEM IC25 IICCM90 SSOA (RBSOA) T(SSCC SOA) PC TJ TJM Tstg VISOL Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TTCC = = 90°C 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 10Ω Clamped Inductive Load VRGGE==1105ΩV, ,nVonCErSe=pe1t2it0iv0eV, TJ = 125°C TC = 25°C 50/60Hz IISOL ≤ 1mA t = 1min t = 1s Mounting Torque Terminal Connection Torque Maximum Ratings 1700 1700 V V ± 20 V ± 30 V 38 A 21 A 265 A ICM = 84 1360 A V 10 313 -55 .
.
.
+150 150 -55 .
.
.
+150 2500 3000 1.
5/13 1.
3/11.
5 30 μs W °C °C °C V~ V~ Nm/lb.
in.
Nm/lb.
in.
g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 750μA, VCE = VGE ICES VCE = 0.
8 • VCES, VGE = 0V IGES VCE(sat) V...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)