Main Product Characteristics:
VDSS
20V
RDS(on) 10mohm(typ. )
ID 8A
TSSOP-8
Features and Benefits:
Advanced trench MOSFET process technology Special designed for buttery protection, load
switching and general power management Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SSF2112H2
43 21 5 678
D1
S1 S1
28121025HA2
G1
D2
S2 S2 G1
G2
D1 G2
S1
D2 S2
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications
Absolute max Rating:
Parameter
Drain-Source Voltage Gate-Source Vo...
SSF2112H2 PDF File
