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2N6232

Part Number 2N6232
Manufacturer Seme LAB
Title Bipolar NPN Device
Description 2N6232 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max...
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2N6230 : 2N6230 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar PNP Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) max. 16.64 (0.655) 17.15 (0.675) 1 2 Bipolar PNP Device. VCEO = 120V 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) IC = 10A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter VCEO* IC(CONT) hFE ft PD Test .

2N6230 : www.DataSheet4U.com Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com .

2N6230 : ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·For high power audio; disk head positioners and other linear applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6229 VCBO Collector-base voltage 2N6230 2N6231 2N6229 VCEO Collector-emitter voltage 2N6230 2N6231 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -100 -120 -140 -100 -120 -140 -7 -10 150 150 -65~200 V A W V V UNIT THERMAL CHARACTERISTICS SYMB.

2N6231 : www.DataSheet4U.com Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com .

2N6231 : ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·For high power audio; disk head positioners and other linear applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6229 VCBO Collector-base voltage 2N6230 2N6231 2N6229 VCEO Collector-emitter voltage 2N6230 2N6231 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -100 -120 -140 -100 -120 -140 -7 -10 150 150 -65~200 V A W V V UNIT THERMAL CHARACTERISTICS SYMB.

2N6232 : SILICON NPN TRANSISTOR TECHNICAL DATA Devices 2N6232 • FAST SWITCHING • LOW SATURATION VOLTAGE 10 AMP 100 V MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Peak (1) Base Current – Continuous Total Power Dissipation @ TC = 250C Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case (1) Pulse Test: Pulse Width = Duty Cycle < % Symbol VCEO VCBO VEBO IC IB PD TJ, Tstg Value 100 140 7.0 10 1.25 -65 to +200 Units Vdc Vdc Vdc Adc Adc W W/0C 0C Symbol RθJC Max. 6.67 Unit 0C/W TO-5 ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characterist.

2N6233 : .

2N6234 : 2N6234 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 14.48 (0.570) 14.99 (0.590) 2 0.71 (0.028) 0.86 (0.034) Bipolar NPN Device. VCEO = 275V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) TO66 (TO213AA) PINOUTS 1 – Base 2 – Emitter Case – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 275.

2N6235 : 2N6235 Dimensions in mm (inches). 3.68 (0.145) rad. max. 6.35 (0.250) 8.64 (0.340) 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. 11.94 (0.470) 12.70 (0.500) 24.13 (0.95) 24.63 (0.97) 1 14.48 (0.570) 14.99 (0.590) 2 0.71 (0.028) 0.86 (0.034) Bipolar NPN Device. VCEO = 325V IC = 5A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) TO66 (TO213AA) PINOUTS 1 – Base 2 – Emitter Case – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 325.

2N6235 : .

2N6235 : ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 325V(Min) ·DC Current Gain- : hFE = 25-125@ IC= 1A ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC = 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed f for high-voltage medium power and switching reguators applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 325 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current 2 A PC Collector Power Dissipation@TC=25℃ 50 W TJ Junction.

2N6236 : 2N6236-2N6241 High-reliability discrete products and engineering services since 1977 SILICON CONTROLLED RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Unit Repetitive peak forward and reverse blocking voltage (1) (1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C) 2N6236 2N6237 2N6238 2N6239 2N6240 2N6241 VDRM VRRM 30 50 100 200 400 600 Volts Non-repetitive peak reverse blocking voltage (1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C) 2N6236 2N6237 2N6238 2N6239 2N6240 2N.

2N6236 : 2N6236-2N6241 SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS (TC = 110°C unless otherwise noted) Rating Symbol Value Unit Repetitive peak forward and reverse blocking voltage (1) (1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C) 2N6236 2N6237 2N6238 2N6239 2N6240 2N6241 VDRM VRRM 30 50 100 200 400 600 Volts Non-repetitive peak reverse blocking voltage (1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C) 2N6236 2N6237 2N6238 2N6239 2N6240 2N6241 VRSM 50 100 150 250 450 650 Volts Average on-state current (.

2N6237 : 2N6236-2N6241 High-reliability discrete products and engineering services since 1977 SILICON CONTROLLED RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Unit Repetitive peak forward and reverse blocking voltage (1) (1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C) 2N6236 2N6237 2N6238 2N6239 2N6240 2N6241 VDRM VRRM 30 50 100 200 400 600 Volts Non-repetitive peak reverse blocking voltage (1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C) 2N6236 2N6237 2N6238 2N6239 2N6240 2N.

2N6237 : 2N6236-2N6241 SILICON CONTROLLED RECTIFIERS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS (TC = 110°C unless otherwise noted) Rating Symbol Value Unit Repetitive peak forward and reverse blocking voltage (1) (1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C) 2N6236 2N6237 2N6238 2N6239 2N6240 2N6241 VDRM VRRM 30 50 100 200 400 600 Volts Non-repetitive peak reverse blocking voltage (1/2 sine wave, RGK = 1000Ω, TC = -40 to +110°C) 2N6236 2N6237 2N6238 2N6239 2N6240 2N6241 VRSM 50 100 150 250 450 650 Volts Average on-state current (.

2N6237 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • Passivated Surface for Reliability and Uniformity • Power Rated at Economical Prices • Practical Level Triggering and Holding Characteristics • Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Recommended Electrical Replacement for C106 G AK Order this document by 2N6237/D 2N6237 thru 2N6241 SCRs 4 AMPERES RMS 50 thru 600 VOLTS A .




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