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3N203


Part Number 3N203
Manufacturer Digitron Semiconductors
Title DUAL GATE MOSFET VHF AMPLIFIER
Description 3N201-3N203 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFET VHF AMPLIFIER FEATURES  Available as “HR” ...
Features
 Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
 Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Drain-source voltage Drain-gate voltage Drain current Gate current Tota...

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3N201 : 3N201-3N203 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFET VHF AMPLIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Drain-source voltage Drain-gate voltage Drain current Gate current Total device dissipation @ TA = 25°C Derate above 25°C Total device dissipation @ TC = 25°C Derate above 25°C Lead temperature Junction temperature range Storage temperature range Symbol VDS VDG1 VDG2 ID IG1 IG2 PD PD TL TJ Tstg Value 25 30 50 ±10 360 2.4 1.2 8.0 300 -65 to 1.

3N202 : .

3N202 : 3N201-3N203 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFET VHF AMPLIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Drain-source voltage Drain-gate voltage Drain current Gate current Total device dissipation @ TA = 25°C Derate above 25°C Total device dissipation @ TC = 25°C Derate above 25°C Lead temperature Junction temperature range Storage temperature range Symbol VDS VDG1 VDG2 ID IG1 IG2 PD PD TL TJ Tstg Value 25 30 50 ±10 360 2.4 1.2 8.0 300 -65 to 1.

3N203 : .

3N204 : .

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3N204 : 3N204-3N205 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFET VHF AMPLIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristic SMALL SIGNAL CHARACTERISTICS Forward transfer admittance(3) (VDS = 15Vdc, VG2S = 4.0Vdc, VG1S = 0, f = 1.0kHz) Input capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHz) Reverse transfer capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID = 10mAdc, f = 1.0MHz) Output capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHz.

3N205 : 3N204-3N205 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFET VHF AMPLIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristic SMALL SIGNAL CHARACTERISTICS Forward transfer admittance(3) (VDS = 15Vdc, VG2S = 4.0Vdc, VG1S = 0, f = 1.0kHz) Input capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHz) Reverse transfer capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID = 10mAdc, f = 1.0MHz) Output capacitance (VDS = 15Vdc, VG2S = 4.0Vdc, ID = IDSS, f = 1.0MHz.

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3N209 : 3N209-3N210 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFET VHF AMPLIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Drain – source voltage Drain gate voltage Rating Gate current Drain current – continuous Total power dissipation @ TA = 25°C Derate above 25°C Storage channel temperature range Operating channel temperature Lead temperature, 1/16” from seated surface for 10 s Symbol VDS VDG1 VDG2 IG1R IG1F IG2R IG2F ID PD Tstg Tchannel Value 25 30 -10 10 -10 10.

3N209 : MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Drain Current Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Lead Temperature, 1/16" From Seated Surface for 10 seconds Storage Channel Temperature Range Operating Channel Temperature Symbol vDs V DG1 VDG2 id 'G1R 'G1F G2R 'G2F PD Pd tl Value 25 30 30 30 -10 10 -10 10 3N209 MPF209 Unit Vdc Vdc mAdc mAdc 300 - mW 1.71 mW/°C 300 mW 2.4 mW/°C 260 200 °C Tstg Tchannel -65 to + 175 175 -65 to + 150 150 °C °C 3N209 MPF209 3N209 CASE 20-03, STYLE 9 TO-72 (TO-206AF) MPF209 CASE 317-01, STYLE 1 DUAL-GATE MOSFET UHF COMMUNICATIONS —N-CHANNEL DEPLETION E.




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