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BZX55-15

Part Number	BZX55-15
Manufacturer	NXP
Description	Voltage regulator diodes
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX55 series Voltage regulator diodes Product speciﬁcation Supersedes data ...
Datasheet	BZX55-15 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX55 series Voltage regulator diodes Product speciﬁcation Supersedes data of April 1992 1996 Apr 26 Philips Semiconductors Product speciﬁcation Voltage regulator diodes FEATURES • Total power dissipation: max.
500 mW • Tolerance series: ±5% • Working voltage range: nom.
2.
4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max.
40 W.
APPLICATIONS • Low voltage stabilizers or voltage references.
The diodes are type branded.
BZX55 series DESCRIPTION Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages.
The diodes are available in the normalized E24 ±5% tolerance range.
The series consists of 37 types with nominal working voltages from 2.
4 to 75 V (BZX55-C2V4 to BZX55-C75).
handbook, halfpage k a MAM239 Fig.
1 Simplified outline (SOD27; DO-35) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL IF IZSM Ptot PZSM PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation non-repetitive peak reverse power dissipation tp = 100 µs; square wave; Tj = 25 °C prior to surge Tamb = 50 °C; note 1 Tamb = 50 °C; note 2 tp = 100 µs; square wave; Tj = 25 °C prior to surge tp = 8.
3 ms; square wave; Tj ≤ 150 °C prior to surge Tstg Tj Notes 1.
Device mounted on a printed circuit-board without metallization pad; lead length max.
2.
Tie-point temperature ≤ 50 °C; lead length 8 mm.
ELECTRICAL CHARACTERISTICS Total series Tj = 25 °C; unless otherwise specified.
SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 100 mA; see Fig.
4 MIN.
− MAX.
1.
0 V UNIT storage temperature junction temperature CONDITIONS MIN.
− MAX.
250 UNIT mA see Table “Per type” − − − − −65 − 400 500 40 30 +200 200 mW mW W W °C °C 1996 Apr 26 2 1996 Apr 26 3 Philips Semiconductors Per type Tj = 25 °C; unless otherwise specified.
WORKING VOLTAGE VZ (V) at IZtest DIFFERENTIAL RESISTANCE rdif (Ω) at IZ MAX.
600 600 600 6...

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