DatasheetsPDF.com

MBRB1080CT

SANGDEST MICROELECTRONICS
Part Number MBRB1080CT
Manufacturer SANGDEST MICROELECTRONICS
Description SCHOTTKY RECTIFIER
Published Jul 7, 2017
Detailed Description MBR10...CT MBRB10...CT MBR10...CT-1 Technical Data Data Sheet N0735, Rev. A MBR1080/90/100CT MBRB1080/90/100CT MBR1080/9...
Datasheet PDF File MBRB1080CT PDF File

MBRB1080CT
MBRB1080CT


Overview
MBR10.
.
.
CT MBRB10.
.
.
CT MBR10.
.
.
CT-1 Technical Data Data Sheet N0735, Rev.
A MBR1080/90/100CT MBRB1080/90/100CT MBR1080/90/100CT-1 SCHOTTKY RECTIFIER Features Applications  150 C TJ operation   Center tap configuration   Low forward voltage drop   High purity, high temperature epoxy encapsulation for   enhanced mechanical strength and moisture resistance  High frequency operation   Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot  Additional testing can be offered upon request Switching power supply Converters Free-Wheeling diodes Reverse battery protection MBR10.
.
.
CT MBRB10.
.
.
CT MBR10.
.
.
CT-1 TO-220AB D2PAK TO-262 Maximum Ratings: Characteristics Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Peak One Cycle Non-Repetitive Surge Current(Per Leg) Symbol VRRM VRWM VR IF (AV) IFSM Condition - 50% duty cycle @Tc=100°C, rectangular wave form 8.
3ms, Half Sine pulse , TC = 25 C Max.
80 MBR1080CT 90 MBR1090CT 100 MBR10100CT 5(Per Leg) 10(Per Device) 120 Units V A A  China - Germany - Korea - Singapore - United States   http://www.
smc-diodes.
com - sales@ smc-diodes.
com  Technical Data Data Sheet N0735, Rev.
A MBR10.
.
.
CT MBRB10.
.
.
CT MBR10.
.
.
CT-1 Electrical Characteristics: Characteristics Forward Voltage Drop (Per Leg)* Reverse Current (Per Leg)* Junction Capacitance(Per Leg) Typical Series Inductance (Per Leg) Voltage Rate of Change * Pulse width < 300 µs, duty cycle < 2% Symbol VF1 VF2 IR1 IR2 CT LS dv/dt Condition @ 3A, Pulse, TJ = 25 C @ 5A, Pulse, TJ = 25 C @ 3 A, Pulse, TJ = 125 C @ 5 A, Pulse, TJ = 125 C @VR = rated VR TJ = 25 C @VR = rated VR TJ = 125 C @VR = 5V, TC = 25 C fSIG = 1MHz Measured lead to lead 5 mm from package body - Typ.
0.
70 0.
79 0.
60 0.
65 0.
02 Max.
0.
78 0.
85 0.
65 0.
75 1.
00 Units V V mA 4 15 mA 280 300 pF 8.
0 - nH - 10...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)