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IRFS730 Datasheet PDF


Part Number IRFS730
Manufacturer BLUE ROCKET ELECTRONICS
Title N-CHANNEL MOSFET
Description TO-220F N MOS 。N-CHANNEL MOSFET in a TO-220F Plastic Package. / Features ,,。 Low gate charge, low crss, fast switching. / Applications DC...
Features ,,。 Low gate charge, low crss, fast switching. / Applications DC/DC 。 These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. / Equivalent Circuit / Pinning 1 23 PIN1:G PIN 2:D PIN 3:S / hFE Classifications & Marking 。See Marking In...

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Datasheet IRFS730 PDF File








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IRFS730 : This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. TO-220 D²PAK I²PAK Figure 1. Internal schematic diagram Applications ■ ■ ■ Motor control High current, switching application Automotive environment Table 1. Device summary Order code STB141NF55 Marking B141NF55 B141NF55 P141NF55 Package D²PAK I²PAK TO-220 Packaging Tape & reel Tube Tube STB141NF55-1 STP141NF55 August 2007 Rev 1 1/15 www.st.com Free Datasheet http:.

IRFS730A : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 400 V ±30 V 3.9 A 22 A 38 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 3.31 62.5 UNIT ℃/W ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn IN.

IRFS730A : Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology www.DataSheet4U.com IRFS730A BVDSS = 400 V RDS(on) = 1.0 Ω ID = 3.9 A TO-220F Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Lower RDS(ON) : 0.765 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt.

IRFS730B : These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. Features • • • • • • 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series .




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