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BC808-25LT1

Part Number	BC808-25LT1
Manufacturer	ON Semiconductor
Description	General Purpose Transistors
Published	Jul 17, 2017
Detailed Description	BC808−25LT1, BC808−40LT1 General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available MAXIMUM RAT...
Datasheet	BC808-25LT1 PDF File

Overview

BC808−25LT1, BC808−40LT1 General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VCEO VCBO VEBO IC −25 −30 −5.
0 −500 V V V mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.
8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.
4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously...

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