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BC856A


Part Number BC856A
Manufacturer Multicomp
Title PNP Transistor
Description PNP Transistor General Purpose SOT-23 Features: • Low current (maximum100 mA) • Low voltage (maximum 65 V) Applications: • General purpose switch...
Features
• Low current (maximum100 mA)
• Low voltage (maximum 65 V) Applications:
• General purpose switching and amplification Maximum Ratings and Characteristics : Tamb = 25°C unless otherwise specified Parameter Symbol Value Collector - Base Voltage - BC856 - BC857 - BC858 VCBO -80 -50 -30 Colle...

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BC856 : PNP general-purpose transistors in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia BC856 SOT23 BC856A BC856B BC857 BC857A BC857B BC857C BC858B JEDEC TO-236AB NPN complement BC846 BC846A BC846B BC847 BC847A BC847B BC847C BC848B 2. Features and benefits • Low current (max. 100 mA) • Low voltage (max. 65 V) 3. Applications • General-purpose switching and amplification Nexperia BC856; BC857; BC858 65 V, 100 mA PNP general-purpose transistors 4. Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter VCEO collector-emitter voltage BC856; BC8.

BC856 : PNP Transistor General Purpose SOT-23 Features: • Low current (maximum100 mA) • Low voltage (maximum 65 V) Applications: • General purpose switching and amplification Maximum Ratings and Characteristics : Tamb = 25°C unless otherwise specified Parameter Symbol Value Collector - Base Voltage - BC856 - BC857 - BC858 VCBO -80 -50 -30 Collector - Emitter Voltage - BC856 - BC857 - BC858 Emitter - Base Voltage Collector Current - Continuous Collector Dissipation Junction and Storage Temperature VCEO Vebo IC PC Tj, Tstg -65 -45 -30 -5 -0.1 250 -65 to +150 Unit V A mW °C Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emiter-Base Breakdown Voltage Col.

BC856 : SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package. / Features ,,。 Low current ,Low voltage ,S-mini package. / Applications  General power amplifier application. / Equivalent Circuit / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range A 125~250 B 220~475 Marking H3A H3B http://www.fsbrec.com 1/6 BC856 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC Tj Tst.

BC856 : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E BC857B = 3F BC857C = 3G BC858 = 3M BC858A = 3J BC858B = 3K BC858C = 3L Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (+VBE = 1 V) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 60 °C Junction temperature Small–signal current gain –IC = 2 mA; –VCE = 5 V; f = 1 kHz Transit.

BC856 : BC856BC858 PNP Silicon General Purpose Transistors for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Total Device Dissipation Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol -VCBO -VCEO -VEBO -IC -ICM Ptot RθJA TJ, Ts BC856 80 65 BC857 50 45 5 100 200 200 BC858 30 30 417 - 55 to + 150 Unit V V V mA mA mW OC/W OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 21/06/2006 .

BC856 : PNP general purpose Transistor FEATURES  Low current.(max.100mA).  Low voltage.. Pb Lead-free Production specification BC856/857/858 APPLICATIONS  General purpose switching and amplification. ORDERING INFORMATION Type No. Marking BC856A/B BC857A/B/C BC858A/B/C 3A/3B 3E/3F/3G 3J/3K/3L SOT-23 Package Code SOT-23 SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage BC856 BC857 BC858 BC856 BC857 BC858 -80 -50 -30 -65 -45 -30 VEBO Emitter-Base Voltage -5 IC Collector Current -Continuous -0.1 PC Collector Dissipation 250 RθJA Thermal Resistance,Junction to Ambient 417 Tj,Ts.

BC856 : BC856~BC859 PNP Silicon Epitaxial Transistors For switching and amplifier applications 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER SYMBOL Collector Base Voltage BC856 BC857 BC858, BC859 -VCBO Collector Emitter Voltage BC856 BC857 BC858, BC859 -VCEO Emitter Base Voltage -VEBO Collector Current -IC Peak Collector Current -ICM Power Dissipation Ptot Junction Temperature TJ Storage Temperature Range Tstg Characteristics at Ta = 25℃ PARAMETER DC Current Gain at -VCE = 5 V, -IC = 2 mA Current Gain Group A B C Collector Base Cutoff Current at -VCB = 30 V Collector Base Breakdown Voltage at -IC = 10 µA BC856 BC857 .

BC856 : BC856 SERIES DATA SHEET PNP GENERAL PURPOSE TRANSISTORS VOLTAGE 65/45/30 Volts POWER 225 mW SOT- 23 FEATURES General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector Current IC = -100mA Complimentary (PNP) Devices : BC846/BC847/BC848/BC849 Series Pb free product are available : 99% Sn above can meet RoHS environment substance directive request .056(1.40) .047(1.20) .119(3.00) .110(2.80) .083(2.10) .066(1.70) MECHANICAL DATA Case: SOT-23 Terminals : Solderable per MIL-STD-750,Method 2026 Approx Weight: 0.008 grams Device Marking : .006(.15)MAX .020(.50) .014(.35) .044(1.10) .035(0.90) .007(.20)MIN .103(2.60) .086(2.20) Unit: inch (mm) .006(.15) .002(.

BC856 : BC856- BC860 PNP Epitaxial Silicon Transistor BC856- BC860 PNP Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits • Low Noise: BC859, BC860 • Complement to BC846 ... BC850 Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : BC856 : BC857/860 : BC858/859 VCEO Collector-Emitter Voltage : BC856 : BC857/860 : BC858/859 VEBO Emitter-Base Voltage IC Collector Current (DC) PC Collector Power Dissipation TJ Junction Temperature TSTG Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor.

BC856 : • General purpose application • Switching application Features • High voltage : VCEO=-55V • Complementary pair with BC846 Ordering Information Type NO. BC856 Marking TA : hFE rank Package Code SOT-23 Outline Dimensions 2.4±0.1 1.30±0.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 1.12 Max. 2.9±0.1 KST-2009-000 0.124 PIN Connections 1. Base 2. Emitter 3. Collector 0.38 0~0.1 -0.03 +0.05 1 BC856 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25°C) Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings -80 -55 -5 -100 200 150 -55~.

BC856 : BC856 ... BC860 BC856 ... BC860 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2015-05-12 2.9 ±0.1 0.4+0.1 -0.05 3 Type Code 2.4 ±0.2 1.3±0.1 1.1+0.1 -0.2 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. 12 1.9±0.1 Dimensions - Maße [mm] 1=B 2=E 3=C Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle PNP 250 mW SOT-23 (TO-236) 0.01 g Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollek.

BC856 : VISHAY BC856 to BC859 Vishay Semiconductors Small Signal Transistors (PNP) Features • PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups A, B, and C) according to their current gain. The type BC856 is available in groups A and B, however, the types BC857, BC558 and BC859 can be supplied in all three groups. The BC849 is a low noise type. • As complementary types, the NPN transistors BC846...BC849 are recomended. 2 1 1 B 3 18978 C 3 E 2 Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.8 mg Marking: BC856A = 3A BC8.

BC856 : The CENTRAL SEMICONDUCTOR BC856, BC857 and BC858 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: PLEASE SEE MARKING CODE TABLE ON FOLLOWING PAGE Note: Reverse Lead Codes Available, Add “R” to the end of the Part # and Marking Code. MAXIMUM RATINGS (TA=25°C) SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Power Dissipation Operating and Storage VCBO VCEO VEBO IC ICM IBM PD Junction Temperature Thermal Resistance TJ,Tstg ΘJA BC858 30 30 BC85.

BC856 : SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES For Complementary With NPN Type BC846/847/848. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING BC856 -80 Collector-Base Voltage BC857 VCBO -50 BC858 -30 Collector-Emitter Voltage BC856 BC857 BC858 VCEO -65 -45 -30 BC856 -5 Emitter-Base Voltage BC857 BC858 VEBO -5 -5 Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range IC -100 IE 100 PC * 350 Tj 150 Tstg -55 150 PC* : Package Mounted On 99.5% Alumina 10 8 0.6mm. UNIT V V V mA mA mW BC856/7/8 EPITAXIAL PLANAR PNP TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.3.

BC856 : UNISONIC TECHNOLOGIES CO., LTD BC856/BC857/BC858 SWITCHING AND AMPLIFIER APPLICATIONS PNP SILICON TRANSISTOR „ FEATURES *Suitable for automatic insertion in thick and thin-film circuits *Complement to BC846/BC847/BC848 *Pb-free plating product number: BC856L/BC857L/BC858L www.DataSheet4U.com „ ORDERING INFORMATION Package SOT-23 SOT-23 SOT-23 Pin Assignment 1 2 3 E B C E B C E B C Packing Tape Reel Tape Reel Tape Reel Order Number Normal Lead Free Plating BC856-x-AE3-R BC856L-x-AE3-R BC857-x-AE3-R BC857L-x-AE3-R BC858-x-AE3-R BC858L-x-AE3-R Note: x: Rank „ MARKING BC856 BC857 BC858 www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-028,B BC856/BC85.

BC856 : SMD Type TransistIoCrs PNP General Purpose Transistor BC856,BC857,BC858 Features Low current (max. 100 mA). Low voltage (max. 65 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol BC856 Collector-base voltage VCBO -80 Collector-emitter voltage VCEO -65 Emitter-base voltage VEBO Collector current IC Peak collector current ICM Peak base current IBM Total power dissipation * Ptot Junction temperature Tj Storage temperature Tstg Operating ambient temperature Ramb Thermal resistance from junction to ambient * Rth j-a * Tr.

BC856 : DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC846, BC847 and BC848. MARKING TYPE NUMBER BC856 BC856A BC856B BC857 BC857A BC857B BC857C BC858B MARKING CODE(1) 3D* 3A* 3B* 3H* 3E* 3F* 3G* 3K* Note 1. * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. handbook, halfpage 3 1 Top view 1 2 MAM256 3 2 Fig.1 Simplified outline (SOT23) and symbol. ORDERING INFORMATION TYPE NUMBER BC856 BC857 BC858 NAME − − − PACKAGE DESCRIPTION plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads plastic surface mounted package; 3 leads VERSION SOT23 SOT23 SOT23 2004 Jan 16 2 NXP Semiconductors PNP general purpose transi.




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