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AP80N03S

Advanced Power Electronics
Part Number AP80N03S
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Jul 19, 2017
Detailed Description Advanced Power Electronics Corp. AP80N03S N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Fast Switching...
Datasheet PDF File AP80N03S PDF File

AP80N03S
AP80N03S

Overview
Advanced Power Electronics Corp.
AP80N03S N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance ▼ Fast Switching ▼ Simple Drive Requirement Description G D S TO-263 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP80N03P) is available for low-profile applications.
BVDSS RDS(ON) ID 30V 8mΩ 80A D G S Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Rating 30 ±...


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