DatasheetsPDF.com

KTC3875GR-G

Part Number	KTC3875GR-G
Manufacturer	Comchip
Description	General Purpose Transistor
Published	Jul 23, 2017
Detailed Description	General Purpose Transistor KTC3875GR-G (NPN) RoHS Device Features - High hFE - Low noise Circuit Diagram 1 Base Colle...
Datasheet	KTC3875GR-G PDF File

Overview

General Purpose Transistor KTC3875GR-G (NPN) RoHS Device Features - High hFE - Low noise Circuit Diagram 1 Base Collector 3 2 Emitter 0.
055(1.
40) 0.
047(1.
20) SOT-23 0.
118(3.
00) 0.
110(2.
80) 3 1 : BASE 2 : EMITTER 3 : COLLECTOR 12 0.
079(2.
00) 0.
071(1.
80) Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Collector current IC 150 mA Collector power dissipation PC 150 mW Thermal resistance from junction to ambient RθJA 833 °C/W Junction temperature range TJ 150 °C Storage temperature range Tstg -55~+150 °C 0.
045(1.
15) 0.
035(0.
90) 0.
006(0.
15) 0.
003(0.
08) 0.
100(2.
55) 0.
089(2.
25) 0.
020(0.
50) 0.
012(0.
30) 0.
004(0.
10) max 0.
020(0.
50) 0.
012(0.
30) Dimensions in inches and (millimeter) Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Conditions Symbol Collector-Base breakdown voltage IC=100μA , IE=...

Similar Datasheet

KTC3875GR-G General Purpose Transistor - Comchip

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)