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KTD1304

GME
Part Number KTD1304
Manufacturer GME
Description NPN Silicon Epitaxial Planar Transistor
Published Jul 23, 2017
Detailed Description NPN Silicon Epitaxial Planar Transistor FEATURES z High emitter-base voltage. z High reverse hFE. z Low on resistance. ...
Datasheet PDF File KTD1304 PDF File

KTD1304
KTD1304


Overview
NPN Silicon Epitaxial Planar Transistor FEATURES z High emitter-base voltage.
z High reverse hFE.
z Low on resistance.
Pb Lead-free APPLICATIONS z Audio muting application.
Production specification KTD1304 ORDERING INFORMATION Type No.
Marking KTD1304 MAX SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 25 VCEO Collector-Emitter Voltage 20 VEBO Emitter-Base Voltage 12 IC Collector Current -Continuous 300 IB Base Current 30 PC Collector Power Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mA mW ℃ C113 Rev.
A www.
gmicroelec.
com 1 Production specification NPN Silicon Epitaxial Planar Transistor KTD1304 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC=1m...


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