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IXUC60N10

IXYS
Part Number IXUC60N10
Manufacturer IXYS
Description Power MOSFET
Published Jul 27, 2017
Detailed Description ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 10...
Datasheet PDF File IXUC60N10 PDF File

IXUC60N10
IXUC60N10

Overview
ADVANCE TECHNICAL INFORMATION Trench Power MOSFET IXUC 60N10 ISOPLUS220TM Electrically Isolated Back Surface VDSS = 100 V ID25 = 60 A RDS(on) = 16.
4 mΩ ISOPLUS 220TM Symbol Test Conditions VDSS VGS ID25 I D90 IS25 IS90 ID(RMS) EAS PD T J T JM T stg TL V ISOL FC Weight T J = 25°C to 150°C Continuous TC = 25°C; Note 1 TC = 90°C, Note 1 TC = 25°C; Note 1, 2 TC = 90°C, Note 1, 2 Package lead current limit T C = 25°C TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s RMS leads-to-tab, 50/60 Hz, t = 1 minute Mounting force Maximum Ratings 100 V ±20 V 60 A 45 A 60 A 45 A 45 A tlb mJ 150 W -55 .
.
.
+175 175 -55 .
.
.
+150 °C °C °C 300 °C 2500 V~ 11 .
.
.
65 / 2.
4 .
.
.
11 N/lb 2g Symbol RDS(on) VGS(th) IDSS I GSS Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
VGS = 10 V, ID = 45 A, Note 3 VGS = 10 V, ID = ID90, TJ = 125°C Note 3 VDS = VGS, ID = 1 mA VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C VGS = ±20 VDC...


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