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IXFT75N10Q

IXYS
Part Number IXFT75N10Q
Manufacturer IXYS
Description POWER MOSFETS
Published Jul 27, 2017
Detailed Description Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt ...
Datasheet PDF File IXFT75N10Q PDF File

IXFT75N10Q
IXFT75N10Q

Overview
Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances IXFH 75N10Q IXFT 75N10Q VDSS ID25 RDS(on) = 100 V = 75 A = 20 mW trr £ 200ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.
6 mm (0.
062 in.
) from case for 10 s Mounting torque TO-247 AD TO-268 Maximum Ratings 100 V 100 V ±20 V ±30 V 75 A 300 A 75 A 30 mJ 1.
5 J 5 V/ns ...


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