DatasheetsPDF.com

JANSR2N7390U

International Rectifier
Part Number JANSR2N7390U
Manufacturer International Rectifier
Description RADIATION HARDENED POWER MOSFET
Published Jul 30, 2017
Detailed Description PD-91804F IRHE9230 JANSR2N7390U RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) 200V, P-CHANNEL REF: MIL-PRF-19...
Datasheet PDF File JANSR2N7390U PDF File

JANSR2N7390U
JANSR2N7390U

Overview
PD-91804F IRHE9230 JANSR2N7390U RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18) 200V, P-CHANNEL REF: MIL-PRF-19500/630 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHE9230 100 kRads(Si) IRHE93230 300 kRads(Si) RDS(on) 0.
80 0.
80 ID -4.
0A -4.
0A QPL Part Number JANSR2N7390U JANSF2N7390U LCC-18 Description IR HiRel RAD-Hard HEXFET technology provides high performance power MOSFETs for space applications.
This technology has over a decade of proven performance and reliability in satellite applications.
These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features  Single Event E...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)