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T0258HF65G

IXYS
Part Number T0258HF65G
Manufacturer IXYS
Description Insulated Gate Bi-Polar Transistor
Published Aug 1, 2017
Detailed Description Date:- 18 Feb, 2015 Data Sheet Issue:- A2 Advance data Insulated Gate Bi-Polar Transistor Type T0258HF65G Absolute Max...
Datasheet PDF File T0258HF65G PDF File

T0258HF65G
T0258HF65G

Overview
Date:- 18 Feb, 2015 Data Sheet Issue:- A2 Advance data Insulated Gate Bi-Polar Transistor Type T0258HF65G Absolute Maximum Ratings VCES VCES VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Collector – emitter voltage (Tj 25°C) Collector – emitter voltage (Tj -40°C) Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage MAXIMUM LIMITS 6500 6500 6000 3600 ±20 UNITS V V V V V IC ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repetitive peak forward current, tp=1ms, Diode Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) Maximum power dissipation, IGBT (Note 2) Critical diode di/dt (note 3) Operating temperature range.
Storage temperature range.
Notes: 1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximu...


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