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T0570VD25G

IXYS
Part Number T0570VD25G
Manufacturer IXYS
Description Insulated Gate Bi-Polar Transistor
Published Aug 1, 2017
Detailed Description Date:- 4 Sep, 2015 Data Sheet Issue:- A1 Advance data Insulated Gate Bi-Polar Transistor Type T0570VD25G Absolute Maxi...
Datasheet PDF File T0570VD25G PDF File

T0570VD25G
T0570VD25G

Overview
Date:- 4 Sep, 2015 Data Sheet Issue:- A1 Advance data Insulated Gate Bi-Polar Transistor Type T0570VD25G Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage MAXIMUM LIMITS 2500 1250 ±20 UNITS V V V IC ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repetitive peak forward current, tp=1ms, Diode Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) Maximum power dissipation, IGBT (Note 2) Critical diode di/dt (note 3) Operating temperature range.
Storage temperature range.
Notes: 1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 750nH.
4) Half-sinewave, 125°C Tj initial.
MAXIMUM LIMITS 570 1140 570 1140 ...


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