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T0800EB45G

IXYS
Part Number T0800EB45G
Manufacturer IXYS
Description Insulated Gate Bi-Polar Transistor
Published Aug 1, 2017
Detailed Description WESTCODE An IXYS Company Date:- 3 March, 2012 Data Sheet Issue: - 1 Insulated Gate Bi-Polar Transistor Type T0800EB45G...
Datasheet PDF File T0800EB45G PDF File

T0800EB45G
T0800EB45G

Overview
WESTCODE An IXYS Company Date:- 3 March, 2012 Data Sheet Issue: - 1 Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage IC(DC) ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repetitive peak forward current, tp=1ms, Diode Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (Note 4) Peak non-repetitive surge tp=10ms, VRM≤10V, Diode (Note 4) Maximum power dissipation, IGBT (Note 2) Critical diode di/dt (note 3) Operating temperature range.
Storage temperature range.
Notes: 1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) Maximum commutation loop inductance 200nH.
4) Half-sinewave, 125°C Tj initial.
MAXIMUM LIMITS 4500 2800 ±20 MAXIMUM LIMITS 800 1600 800 ...


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