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T0800TB45E

IXYS
Part Number T0800TB45E
Manufacturer IXYS
Description Insulated Gate Bi-Polar Transistor
Published Aug 1, 2017
Detailed Description WESTCODE An IXYS Company Date:- 14 July, 2011 Data Sheet Issue:- P1 Prospective Data Insulated Gate Bi-Polar Transisto...
Datasheet PDF File T0800TB45E PDF File

T0800TB45E
T0800TB45E

Overview
WESTCODE An IXYS Company Date:- 14 July, 2011 Data Sheet Issue:- P1 Prospective Data Insulated Gate Bi-Polar Transistor Type T0800TB45E Absolute Maximum Ratings VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Permanent DC voltage for 100 FIT failure rate.
Peak gate – emitter voltage MAXIMUM LIMITS 4500 2800 ±20 UNITS V V V IC(DC) ICRM IECO PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Maximum reverse emitter current, tp=100µs, (note 2 & 3) Maximum power dissipation, IGBT (Note 2) Critical diode di/dt (note 3) Operating temperature range.
Storage temperature range.
Notes: - 1) Unless otherwise indicated Tj = 125ºC.
2) Tsink = 25°C, double side cooled.
3) The use of an anti-parallel diode is recommended.
MAXIMUM LIMITS 800 1600 800 6.
4 1500 -40 to +125 -40 to +125 UNITS A A A KW A/µs °C °C Tentative Data Sheet T0800TB45E Issue P1 Page 1 of 6 July, 2011 WESTCODE An IXYS Company Character...


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