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T0900DF65A

IXYS
Part Number T0900DF65A
Manufacturer IXYS
Description Insulated Gate Bi-Polar Transistor
Published Aug 1, 2017
Detailed Description Date:- 28 Nov, 2014 Data Sheet Issue:- P2 Prospective Data Insulated Gate Bi-Polar Transistor Type T0900DF65A Absolute...
Datasheet PDF File T0900DF65A PDF File

T0900DF65A
T0900DF65A

Overview
Date:- 28 Nov, 2014 Data Sheet Issue:- P2 Prospective Data Insulated Gate Bi-Polar Transistor Type T0900DF65A Absolute Maximum Ratings VCES VCES VCES VDC link VGES VOLTAGE RATINGS Collector – emitter voltage Collector – emitter voltage (Tj 25°C) Collector – emitter voltage (Tj -40°C) Permanent DC voltage for 100 FIT failure rate Peak gate – emitter voltage MAXIMUM LIMITS 6500 6500 6000 3600 ±20 UNITS V V V V V IC ICRM IF(DC) IFRM IFSM IFSM2 PMAX (di/dt)cr Tj Tstg RATINGS DC collector current, IGBT Repetitive peak collector current, tp=1ms, IGBT Continuous DC forward current, Diode Repetitive peak forward current, tp=1ms, Diode Peak non-repetitive surge tp=10ms, VRM=60%VRRM, Diode (No...


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