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2N6277

Part Number	2N6277
Manufacturer	Motorola
Description	High Power NPN SIlicon Transistor
Published	Aug 1, 2017
Detailed Description	MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military...
Datasheet	2N6277 PDF File

Overview

MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors .
.
.
designed for use in industrial–military power amplifer and switching circuit applications.
• High Collector Emitter Sustaining — VCEO(sus) = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275 VCEO(sus) = 150 Vdc (Min) — 2N6277 • High DC Current Gain — hFE = 30–120 @ IC = 20 Adc hFE = 10 (Min) @ IC = 50 Adc • Low Collector–Emitter Saturation Voltage — VCE(sat) = 1.
0 Vdc (Max) @ IC = 20 Adc • Fast Switching Times @ IC 20 Adc tr = 0.
35 µs (Max) ts = 0.
8 µs (Max) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtf = 0.
25 µs (Max) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ• Complement to 2N6377–79 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS(1) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage Collector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter...

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