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2SA673

Dc Components
Part Number 2SA673
Manufacturer Dc Components
Description PNP EPITAXIAL PLANAR TRANSISTOR
Published Aug 9, 2017
Detailed Description DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SA673 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR ...
Datasheet PDF File 2SA673 PDF File

2SA673
2SA673


Overview
DC COMPONENTS CO.
, LTD.
R DISCRETE SEMICONDUCTORS 2SA673 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency amplifier applications Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -35 -35 -5 -500 400 +150 -55 to +150 Unit V V V mA mW oC oC TO-92 .
190(4.
83) .
170(4.
33) .
190(4.
83) .
170(4.
33) .
500 (12.
70) Min 2o Typ 2o Typ .
050 (1.
27)Typ .
022(0.
56) .
014(0.
36) .
100 (2.
54) Typ .
022(0.
56) .
014(0.
36) 321 .
148(3.
76) .
132(3.
36) .
050 5oTyp.
5oTyp.
(1.
27)Typ Dimensions in inches and (millimeters) Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) Characteristic Symbol Min Collector-Base Breakdown Voltage BVCBO -35 Collector-Emitter Breakdown Volat...


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