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2SA933AS

Part Number	2SA933AS
Manufacturer	JCET
Description	PNP Transistor
Published	Aug 9, 2017
Detailed Description	JC(T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA933AS TRANSISTOR (PN...
Datasheet	2SA933AS PDF File

Overview

JC(T JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-92S Plastic-Encapsulate Transistors 2SA933AS TRANSISTOR (PNP) FEATURES ·Excellent hFE Linearity MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -150 mA PC Collector Power dissipation 300 mW TJ Junction Temperature Tstg Storage Temperature 150 ℃ -55~+150 ℃ TO-92S 1.
EMITTER 2.
COLLECTOR 3.
BASE ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage V(BR)CBO V(BR)CEO V(BR)EBO IC=-50μA,IE=0 IC=-1mA,IB=0 IE=-50μA,IC=0 Collector cut-off current ICBO VCB=-60V, IE=0 Emitter cut-off current IEBO VEB= -6V, IC=0 DC current gain hFE VCE=-6 V, IC= -1mA Collector-emitter saturation voltage Transition f...

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