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BC635

Part Number	BC635
Manufacturer	ON Semiconductor
Description	High Current Transistors
Published	Aug 12, 2017
Detailed Description	BC635, BC637, BC639, BC639−16 High Current Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM R...
Datasheet	BC635 PDF File

Overview

BC635, BC637, BC639, BC639−16 High Current Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc BC635 45 BC637 60 BC639 80 Collector - Base Voltage VCBO Vdc BC635 45 BC637 60 BC639 80 Emitter - Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 5.
0 Vdc 1.
0 Adc 625 mW 5.
0 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 800 mW 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Symbol RqJA Max 200 Unit °C/W Thermal Resistance, Junction−to−Case RqJC 83.
3 °C/W Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid ...

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