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BC618

Part Number	BC618
Manufacturer	NXP
Description	NPN Darlington transistor
Published	Mar 23, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC618 NPN Darlington transistor Product speciﬁcation Superse...
Datasheet	BC618 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC618 NPN Darlington transistor Product speciﬁcation Supersedes data of 1997 Jul 04 1999 Apr 23 Philips Semiconductors Product speciﬁcation NPN Darlington transistor FEATURES • Low current (max.
500 mA) • Low voltage (max.
55 V) • High DC current gain.
APPLICATIONS • General purpose low frequency • Relay drivers.
DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package.
handbook, halfpage BC618 PINNING PIN 1 2 3 emitter base collector DESCRIPTION 2 3 1 2 3 TR1 TR2 1 MAM302 Fig.
1 Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 VBE = 0 open collector CONDITIONS open emitter − − − − − − − −65 − −65 MIN.
MAX.
80 55 12 500 800 200 500 +150 150 +150 V V V mA mA mA mW °C °C °C UNIT 1999 Apr 23 2 Philips Semiconductors Product speciﬁcation NPN Darlington transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tj = 25 °C unless otherwise speciﬁed.
SYMBOL ICBO ICES IEBO hFE PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 60 V VBE = 0; VCE = 60 V IC = 0; VEB = 10 V IC = 1 mA; VCE = 5 V; see Fig.
2 IC = 10 mA; VCE = 5 V; see Fig.
2 IC = 200 mA; VCE = 5 V; see Fig.
2 VCEsat VBEsat Cc fT collector-emitter saturation voltage IC = 200 mA; IB = 0.
2 mA base-emitter saturation voltage collector capacitance transition frequency IC = 200 mA; IB = 0.
2 mA IE = 0; VCB = 30 V MIN.
− − − 2000 4000 − − − TYP.
− − − − − −...

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