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M28S

Part Number	M28S
Manufacturer	GME
Description	NPN Silicon Epitaxial Planar Transistor
Published	Aug 16, 2017
Detailed Description	NPN Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z High DC current gain. z High Power Dissip...
Datasheet	M28S PDF File

Overview

NPN Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity.
z High DC current gain.
z High Power Dissipation.
APPLICATIONS z Audio output driver amplifier.
z General purpose switch.
Pb Lead-free ORDERING INFORMATION Type No.
Marking M28S 28S Production specification M28S SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 20 VEBO Emitter-Base Voltage 6 IC Collector Current -Continuous 1 IB Base current 0.
4 PC Collector Power Dissipation 200 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V A A mW ℃ C058 Rev.
A www.
gmicroelec.
com 1 Production specification NPN Silicon Epitaxial Planar Transistor M28S ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown...

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