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2SC3422

Part Number	2SC3422
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Aug 19, 2017
Detailed Description	isc Silicon NPN Power Transistor 2SC3422 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 40V(Min) ·Good L...
Datasheet	2SC3422 PDF File

Overview

isc Silicon NPN Power Transistor 2SC3422 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 40V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1359 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier ·Low speed switching ·Suitable for output stage of 5 watts car radio and car stereo ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1 A 10 W 1.
5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC3422 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIO...

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