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VI20100C-E3

Vishay
Part Number VI20100C-E3
Manufacturer Vishay
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Published Aug 22, 2017
Detailed Description V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trenc...
Datasheet PDF File VI20100C-E3 PDF File

VI20100C-E3
VI20100C-E3

Overview
V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3 www.
vishay.
com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
50 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF20100C 123 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 VB20100C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS VI20100C PIN 1 3 2 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max.
Package 2 x 10 A 100 V 150 A 0.
58 V 150 °C TO-220AB, ITO-220AB, D2PAK (TO-263AB), TO-262AA Circuit configuration Common cathode FEATURES • Trench MOS Schottky technology • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection.
MECHANICAL DATA Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) per device per diode VRRM IF(AV) Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode IFSM Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode Peak repetitive reverse current...


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