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V20DL45BP

Vishay
Part Number V20DL45BP
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Aug 22, 2017
Detailed Description www.vishay.com V20DL45BP Vishay General Semiconductor TMBS® (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell ...
Datasheet PDF File V20DL45BP PDF File

V20DL45BP
V20DL45BP

Overview
www.
vishay.
com V20DL45BP Vishay General Semiconductor TMBS® (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.
31 V at IF = 5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.
7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 Anode 1 Anode 2 K Cathode DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 45 V IFSM 160 A VF at IF = 20 A (TA = 125 °C) TOP max.
(AC model) 0.
50 V 150 °C TJ max.
(DC forward current) 200 °C Package SMPD (TO-263AC) Circuit configuration Single TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MECHANICAL DATA Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: as marked    MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum DC forward current (fig.
1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load VRRM IF(DC) (1) IFSM Operating junction temperature range (AC model) Junction temperature in DC forward current without reverse bias, t =  1 h TOP TJ (2) Note (1) With heatsink (2) Meets the requirements of IEC 61215 ed.
2 bypass diode thermal test V20DL45BP 45 20 160 -40 to +150  200 UNIT V A A °C °C Revision: 14-Mar-2019 1 Document Number: 87787 For technical questions within your region: DiodesAmericas@vishay.
com, DiodesAsia...


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