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V20M100M-E3

Vishay
Part Number V20M100M-E3
Manufacturer Vishay
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Published Aug 22, 2017
Detailed Description www.vishay.com V20M100M-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra ...
Datasheet PDF File V20M100M-E3 PDF File

V20M100M-E3
V20M100M-E3

Overview
www.
vishay.
com V20M100M-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
57 V at IF = 5 A TMBS ® TO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max.
10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 V20M100M PIN 1 PIN 3 PIN 2 CASE TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A (TA = 125 °C) TJ max.
Package 2 x 10 A 100 V 110 A 0.
67 V 175 °C TO-220AB Diode variations Common cathode MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and ...


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