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V30M120M-E3

Vishay
Part Number V30M120M-E3
Manufacturer Vishay
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Published Aug 22, 2017
Detailed Description www.vishay.com V30M120M-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra ...
Datasheet PDF File V30M120M-E3 PDF File

V30M120M-E3
V30M120M-E3

Overview
www.
vishay.
com V30M120M-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
55 V at IF = 5 A TMBS ® TO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max.
10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 V30M120M PIN 1 PIN 3 PIN 2 CASE PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A (TA = 125 °C) TJ max.
Package 2 x 15 A 120 V 120 A 0.
70 V 175 °C TO-220AB Diode variations Common cathode TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching...


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