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VB10170C-M3

Vishay
Part Number VB10170C-M3
Manufacturer Vishay
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Published Aug 22, 2017
Detailed Description VB10170C-E3, VB10170C-M3, VB10170CHM3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrie...
Datasheet PDF File VB10170C-M3 PDF File

VB10170C-M3
VB10170C-M3

Overview
VB10170C-E3, VB10170C-M3, VB10170CHM3 www.
vishay.
com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
57 V at IF = 2.
5 A TMBS ® TO-263AB K 2 1 VB10170C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.
0 A TJ max.
Package 2x5A 170 V 80 A 0.
65 V 175 °C TO-263AB Diode variations Common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/...


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