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VB30100CHM3

Vishay
Part Number VB30100CHM3
Manufacturer Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published Aug 22, 2017
Detailed Description www.vishay.com VB30100C-M3, VB30100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rec...
Datasheet PDF File VB30100CHM3 PDF File

VB30100CHM3
VB30100CHM3

Overview
www.
vishay.
com VB30100C-M3, VB30100CHM3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
455 V at IF = 5 A TMBS ® TO-263AB K 2 1 VB30100C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS Package TO-263AB IF(AV) VRRM 2 x 15 A 100 V IFSM 160 A VF at IF = 15 A TJ max.
Diode variations 0.
63 V 150 °C Common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • AEC-Q101 qualified available: - Automotive ordering code P/NHM3 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection.
MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 ...


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