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VB30M120C-M3

Vishay
Part Number VB30M120C-M3
Manufacturer Vishay
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Published Aug 22, 2017
Detailed Description VB30M120C-E3, VB30M120C-M3, VB30M120CHM3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Bar...
Datasheet PDF File VB30M120C-M3 PDF File

VB30M120C-M3
VB30M120C-M3

Overview
VB30M120C-E3, VB30M120C-M3, VB30M120CHM3 www.
vishay.
com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
52 V at IF = 5 A TMBS ® TO-263AB K 2 1 VB30M120C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max.
Package 2 x 15 A 120 V 150 A 0.
68 V 150 °C TO-263AB Diode variations Common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-co...


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