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VBT1045C-E3

Vishay
Part Number VBT1045C-E3
Manufacturer Vishay
Description Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Published Aug 22, 2017
Detailed Description www.vishay.com VBT1045C-E3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra L...
Datasheet PDF File VBT1045C-E3 PDF File

VBT1045C-E3
VBT1045C-E3

Overview
www.
vishay.
com VBT1045C-E3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
34 V at IF = 2.
5 A TMBS ® TO-263AB K 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 VBT1045C PIN 1 K PIN 2 HEATSINK TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.
0 A T...


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