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VBT1080S-E3

Vishay
Part Number VBT1080S-E3
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Aug 22, 2017
Detailed Description VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Scho...
Datasheet PDF File VBT1080S-E3 PDF File

VBT1080S-E3
VBT1080S-E3


Overview
VT1080S-E3, VFT1080S-E3, VBT1080S-E3, VIT1080S-E3 www.
vishay.
com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
52 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT1080S 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VFT1080S PIN 1 PIN 2 PIN 3 TO-262AA K A NC VBT1080S NC K A HEATSINK VIT1080S 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max.
Package 10 A 80 V 100 A 0.
60 V 150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA Diode variations Single die FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For us...



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