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NGTB45N60SWG

ON Semiconductor
Part Number NGTB45N60SWG
Manufacturer ON Semiconductor
Description IGBT
Published Aug 27, 2017
Detailed Description IGBT NGTB45N60SWG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Tre...
Datasheet PDF File NGTB45N60SWG PDF File

NGTB45N60SWG
NGTB45N60SWG

Overview
IGBT NGTB45N60SWG This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
The IGBT is well suited for half bridge resonant applications.
Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features • Low Saturation Voltage using Trench with Fieldstop Technology • Low Switching Loss Reduces System Power Dissipation • Low Gate Charge • Soft, Fast Free Wheeling Diode • These are Pb−Free Devices Typical Applications • Inductive Heating • Soft S...


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