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NGTG50N60FLWG

ON Semiconductor
Part Number NGTG50N60FLWG
Manufacturer ON Semiconductor
Description IGBT
Published Aug 27, 2017
Detailed Description NGTG50N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench constructi...
Datasheet PDF File NGTG50N60FLWG PDF File

NGTG50N60FLWG
NGTG50N60FLWG

Overview
NGTG50N60FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features • Low Saturation Voltage using Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Optimized for High Speed Switching • 5 ms Short−Circuit Capability • These are Pb−Free Devices Typical Applications • Power Factor Correction • Solar Inverters • Uninterruptable Power Supply (UPS) ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 600 V IC A 100 50 Pulsed collector current, Tpulse limited by TJmax ICM 200 A Short−circuit withstand time VGE = 15 V, VCE = 400 V, TJ ≤ +150°C Gate−emitter voltage Power Dissipation @ TC = 25°C @ TC = 100°C tSC 5 ms VGE $20 V PD W 223 89 Ope...


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