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NGTG35N65FL2WG

ON Semiconductor
Part Number NGTG35N65FL2WG
Manufacturer ON Semiconductor
Description IGBT
Published Aug 27, 2017
Detailed Description NGTG35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective ...
Datasheet PDF File NGTG35N65FL2WG PDF File

NGTG35N65FL2WG
NGTG35N65FL2WG

Overview
NGTG35N65FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
The IGBT is well suited for UPS and solar applications.
Features • Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Optimized for High Speed Switching • 5 ms Short−Circuit Capability • These are Pb−Free Devices Typical Applications • Solar Inverters • Uninterruptible Power Supplies (UPS) • Welding ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collect...


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