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VS-8TQ100S-M3

Vishay
Part Number VS-8TQ100S-M3
Manufacturer Vishay
Description High Performance Schottky Rectifier
Published Aug 29, 2017
Detailed Description www.vishay.com VS-8TQ080S-M3, VS-8TQ100S-M3 Vishay Semiconductors High Performance Schottky Rectifier, 8 A Base catho...
Datasheet PDF File VS-8TQ100S-M3 PDF File

VS-8TQ100S-M3
VS-8TQ100S-M3

Overview
www.
vishay.
com VS-8TQ080S-M3, VS-8TQ100S-M3 Vishay Semiconductors High Performance Schottky Rectifier, 8 A Base cathode 2 D2PAK 1 N/C 3 Anode PRODUCT SUMMARY IF(AV) VR VF at IF IRM TJ max.
EAS Package Diode variation 8A 80 V, 100 V 0.
58 V 7 mA at 125 °C 175 °C 7.
5 mJ TO-263AB (D2PAK) Single die FEATURES • 175 °C TJ operation • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION The VS-8TQ.
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Schottky rectifier series has been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable operation up to 175 °C junction tempe...


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