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NVMFS6B05N

ON Semiconductor
Part Number NVMFS6B05N
Manufacturer ON Semiconductor
Description Power MOSFET
Published Aug 29, 2017
Detailed Description NVMFS6B05N Power MOSFET 100 V, 8.0 mW, 114 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design •...
Datasheet PDF File NVMFS6B05N PDF File

NVMFS6B05N
NVMFS6B05N

Overview
NVMFS6B05N Power MOSFET 100 V, 8.
0 mW, 114 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6B05NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 2, 3) Power Dissipation RqJC (Notes 1, 2) Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current TC = 25°C Steady State TC = 100°C TC = 25°C TC = 100°C TA = 25°C Steady State TA = 100°C TA = 25°C TA = 100°C TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID PD IDM TJ, Tstg 100 ±16 114 80 165 83 17 12 3.
8 1.
9 330 −55 to +...


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