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VFT3060G-E3

Part Number	VFT3060G-E3
Manufacturer	Vishay
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Published	Aug 30, 2017
Detailed Description	VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trenc...
Datasheet	VFT3060G-E3 PDF File

Overview

VT3060G-E3, VFT3060G-E3, VBT3060G-E3, VIT3060G-E3 www.
vishay.
com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
40 V at IF = 5 A TO-220AB TMBS ® ITO-220AB VT3060G 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K VFT3060G 123 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 VBT3060G PIN 1 K PIN 2 HEATSINK VIT3060G 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 15 A TJ max.
Package 2 x 15 A 60 V 150 A 0.
61 V 150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA Diode variations Common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operati...

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VFT3060G-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier - Vishay

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