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HY57V561620BLT-I

Hynix Semiconductor
Part Number HY57V561620BLT-I
Manufacturer Hynix Semiconductor
Description 4 Banks x 4M x 16Bit Synchronous DRAM
Published Aug 30, 2017
Detailed Description HY57V561620B(L)T-I 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B-I is a 268,435,456bit CMOS Synch...
Datasheet PDF File HY57V561620BLT-I PDF File

HY57V561620BLT-I
HY57V561620BLT-I

Overview
HY57V561620B(L)T-I 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B-I is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.
HY57V561620B is organized as 4banks of 4,194,304x16.
HY57V561620B-I is offering fully synchronous operation referenced to a positive edge of the clock.
All inputs and outputs are synchronized with the rising edge of the clock input.
The data paths are internally pipelined to achieve very high bandwidth.
All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count sequence(sequential or interleave).
A burst of read or write cycles in progress can be terminated by a burst terminate command or can be interrupted and replaced by a new bu...


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