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UGF09030

CREE
Part Number UGF09030
Manufacturer CREE
Description 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
Published Sep 4, 2017
Detailed Description UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applicat...
Datasheet PDF File UGF09030 PDF File

UGF09030
UGF09030

Overview
UGF09030 30W, 1 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for base station applications in the frequency band 800MHz to 1000MHz.
Rated with a minimum output power of 30W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation.
• ALL GOLD metal system for highest reliability • Industry standard package • Suggested alternative to the MRF9030 • Internally matched for repeatable manufacturing • High gain, high efficiency and high linearity • Application Specific Performance, 870MHz GSM: 30 Watts 17.
50dB EDGE: 13 Watts 17.
50dB IS95 CDMA: 3.
5 Watts 17.
50 dB CDMA2000: TBD Watts 17.
50dB Package Type 440095 PN: UGF9030F Package Type 440109 PN: UGF9030P Page 1 of 7 Specifications subject to change without notice http://cree.
com/ UGF09030 Rev.
2 Maximum Ratings UGF09030 Rating Drain to Source Voltage, Gate connected to Source Gate to Source Voltage Total Device Dissipation @ Tcase = 70oC...


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