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PMV75UP

nexperia
Part Number PMV75UP
Manufacturer nexperia
Description P-channel Trench MOSFET
Published Sep 11, 2017
Detailed Description PMV75UP 20 V, P-channel Trench MOSFET 25 April 2014 Product data sheet 1. General description P-channel enhancement mo...
Datasheet PDF File PMV75UP PDF File

PMV75UP
PMV75UP

Overview
...de Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • Enhanced power dissipation capability: Ptot = 1000 mW 3.
Applications • LED driver • Power management • High-side loadswitch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current VGS = -4.
5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.
2 A Static characteristics RDSon drain-source on-stat...


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