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RCR1515SI

RCR
Part Number RCR1515SI
Manufacturer RCR
Description N-Channel Enhancement Mode MOSFET
Published Sep 14, 2017
Detailed Description RCR1515SI N-Channel Enhancement Mode Field Effect Transistor z Features 20V/5.1A RDS(ON) = 28mΩ @ VGS = 4.5V RDS(ON) =...
Datasheet PDF File RCR1515SI PDF File

RCR1515SI
RCR1515SI


Overview
RCR1515SI N-Channel Enhancement Mode Field Effect Transistor z Features 20V/5.
1A RDS(ON) = 28mΩ @ VGS = 4.
5V RDS(ON) = 38mΩ @ VGS = 2.
5V RDS(ON) = 60mΩ @ VGS = 1.
8V SOT23 Package z Pin Configurations See Diagram below (top view) z General Description The RCR1515SI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V.
This device is suitable for use as a load switch or in PWM applications.
z Package Information ③ ①② SOT23 Unit:mm z Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current (Continuous) TA=25°C TA=70°C ID Ratings 20 ±12 5.
1 4 Unit V V A 1/5 RCR1515SI Drain Current (Pulse) Power Dissipation TA=25°C Operating Temperature/ Storage Temperature IDM PD TJ//TSTG 20 1 -55~150 A W ℃ z Electrical Characteristics @TA=25℃ unless otherwise noted Parameter Symbol Test Conditions Min Ty...


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