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H9014

ETC
Part Number H9014
Manufacturer ETC
Description NPN EPITAXIAL SILICON TRANSISTOR
Published Sep 17, 2017
Detailed Description NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR • DIE SIZE • METALLIZATION Top Bac...
Datasheet PDF File H9014 PDF File

H9014
H9014

Overview
NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSCILLATOR • DIE SIZE • METALLIZATION Top Back • DIE THICKNESS • PASSIVATION • BONDING PAD SIZE Emitter Base 350µm×350µm Al V/ Ni/Au Typ.
220µm Silicon-Nitride 140µm×140µm 110µm×110µm H9014 hFE CLASSIFICATION Classification hFE A 60~150 B 100~300 CD 200~600 400-1000 Collector on Backside ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) IC=100µA, IE=0 Ic=-1mA, IB=0 IE=-100µA, IC=0 VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=-1mA IC=100mA, IB=-5mA MIN 50 45 5 60 TYP 280 0.
14 MAX 50 50 1000 0.
3 UNIT V V V nA nA V NOTES: Due to probe testing limitations, only the DC parameters are tested.
DS-H9014-001 ...


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