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SKD4N65F

SkySilicon
Part Number SKD4N65F
Manufacturer SkySilicon
Description 650V N-Channel MOSFET
Published Sep 18, 2017
Detailed Description SkySilicon SKD4N65F 650V N-Channel MOSFET  FEATURES  650V/4A RDS(ON)= 3Ω max@ VGS=10V  Lead free and Green Device A...
Datasheet PDF File SKD4N65F PDF File

SKD4N65F
SKD4N65F

Overview
SkySilicon SKD4N65F 650V N-Channel MOSFET  FEATURES  650V/4A RDS(ON)= 3Ω max@ VGS=10V  Lead free and Green Device Available  Low Rds-on to Minimize Conductive Loss  High avalanche Current  PIN DESCRIPTION  Application  Power Supply Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol Parameter Maximum VDSS VGSS Drain-to-Source Voltage Gate-to-Source Voltage 650 ±30 ID Continuous Drain Current TC=25°C TC=100°C 4 2.
2 PD TJ, TSTG Maximum Power Dissipation Junction & Storage Temperature Range TC=25°C TC=100°C 25 10 -55~150 Unit V V A W °C Thermal Characteristics Symbol Parameter Rθjc Thermal Resistance-Junction to Case Rθja Thermal Resistance-Junction to Ambient Rev.
0.
9 – Mar 1 Typical 5.
5 62.
5 Unit ℃/W SkySilicon SkySilicon SKD4N65F 650V N-Channel MOSFET Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Test Conditions Min.
Static Characteristics BVDSS Drain-Source Breakdow...


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